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Electronic properties of stacking faults in 15R-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2002 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 433-4, 531-534 p.Article in journal (Refereed) Published
Abstract [en]

A first-principles calculation of stacking faults in 15R-SiC is reported. All the geometrically distinguishable stacking faults which can be introduced by the glide of partial dislocations in (0001)-basal planes are investigated: there exist as many as five different stacking faults in 15R-SiC. Electronic properties and stacking fault energies of these extended defects are studied based on the density functional theory in the local density approximation. Stacking fault energies are also calculated using the axial next nearest neighbor Ising (ANNNI) model.

Place, publisher, year, edition, pages
2002. Vol. 433-4, 531-534 p.
Keyword [en]
15R-SiC, extended defects, first-principles calculations, stacking faults
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-48553OAI: diva2:269449
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Lindefelt, Ulf
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The Institute of TechnologyDepartment of Physics, Chemistry and Biology
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