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A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 535-538 p.Conference paper, Published paper (Refereed)
Abstract [en]

We show that in the SiC/SiO2 system the interface states in the lower half of the gap are the consequence of the behavior of oxygen in SiC. Investigating the elemental steps of oxidation on a simple model by means of ab initio density functional calculations we find that, in course of the oxidation, carbon-vacancy (V-C) - oxygen complexes constantly arise. The V-C+O complexes have donor states around E-V+0.8 eV. Their presence gives rise to a thin transition layer which is not SiO2 but an oxygen contaminated Si-rich interface layer producing the aforementioned gap states.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 535-538 p.
Keyword [en]
interface states, SiO2, theory
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48554OAI: oai:DiVA.org:liu-48554DiVA: diva2:269450
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Gali, AdamNguyen, Tien SonJanzén, Erik

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