A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 535-538 p.Conference paper (Refereed)
We show that in the SiC/SiO2 system the interface states in the lower half of the gap are the consequence of the behavior of oxygen in SiC. Investigating the elemental steps of oxidation on a simple model by means of ab initio density functional calculations we find that, in course of the oxidation, carbon-vacancy (V-C) - oxygen complexes constantly arise. The V-C+O complexes have donor states around E-V+0.8 eV. Their presence gives rise to a thin transition layer which is not SiO2 but an oxygen contaminated Si-rich interface layer producing the aforementioned gap states.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 535-538 p.
interface states, SiO2, theory
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48554OAI: oai:DiVA.org:liu-48554DiVA: diva2:269450