Angle-resolved studies of SiO2/SiC samples
2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 2002, Trans Tech Publications Inc., 2002, Vol. 433-436, 539-542 p.Conference paper (Refereed)
Angle resolved studies of SiO2/SiC samples utilizing the Si 2p and Si 1s core levels and the Si KLL Auger transitions are reported. Samples with total oxide thicknesses from ca. 5 to 118 A are investigated. The data collected show that two oxidation states only, Si+1 and Si+4, are required to explain and model recorded Si 2p, Si 1s and Si KLL spectra. For all samples investigated the intensity variations observed in the core level components versus electron emission angle are found to be well described by a layer attenuation model when assuming that the sub-oxide, Si+1, is located at the interface. The SiO2 chemical shift is found to be larger in the Si 1s level than in the Si 2p level and moreover to depend on the thickness of the oxide layer.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2002. Vol. 433-436, 539-542 p.
, Materials Science Forum, ISSN 0255-5476 ; Vols. 433-436
angle-resolved photoemission studies, oxidation states, SiO2 shift, SiO2/SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48556DOI: 10.4028/www.scientific.net/MSF.433-436.539ISI: 000185077700129OAI: oai:DiVA.org:liu-48556DiVA: diva2:269452
4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), LINKÖPING, SWEDEN, SEP 02-25, 2002