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Characteristics of Ni Schottky contacts on compensated 4H-SiC layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Materials Science Forum, Vols. 433-436, Trans Tech Publications , 2003, Vol. 433-4, 709-712 p.Conference paper, Published paper (Refereed)
Abstract [en]

The electrical properties of Ni Schottky contacts to compensated 4H-SiC layers have been characterized by means of IN and C-V measurements and the key parameters have been determined. The measured barrier heights were between 0.90 eV and 2.90 eV depending on the conductivity type and the donor/acceptor concentration as well as the measurement techniques used. Inhomogeneties in IN characteristics of some rectifiers at lower forward-bias voltages have been observed. This may suggest enhanced trapping mechanism due to the nonuniform boron compensation of the epilayers.

Place, publisher, year, edition, pages
Trans Tech Publications , 2003. Vol. 433-4, 709-712 p.
Keyword [en]
epilayer compensation, recombination, Schottky contacts, thermionic emission
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48557OAI: oai:DiVA.org:liu-48557DiVA: diva2:269453
Conference
ECSCRM 2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-13

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Yakimova, RositsaKakanakova-Georgieva, AneliaSyväjärvi, MikaelJanzén, Erik

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