Characteristics of Ni Schottky contacts on compensated 4H-SiC layers
2003 (English)In: Materials Science Forum, Vols. 433-436, Trans Tech Publications , 2003, Vol. 433-4, 709-712 p.Conference paper (Refereed)
The electrical properties of Ni Schottky contacts to compensated 4H-SiC layers have been characterized by means of IN and C-V measurements and the key parameters have been determined. The measured barrier heights were between 0.90 eV and 2.90 eV depending on the conductivity type and the donor/acceptor concentration as well as the measurement techniques used. Inhomogeneties in IN characteristics of some rectifiers at lower forward-bias voltages have been observed. This may suggest enhanced trapping mechanism due to the nonuniform boron compensation of the epilayers.
Place, publisher, year, edition, pages
Trans Tech Publications , 2003. Vol. 433-4, 709-712 p.
epilayer compensation, recombination, Schottky contacts, thermionic emission
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48557OAI: oai:DiVA.org:liu-48557DiVA: diva2:269453