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A comparison of MESFETs on different 4H-Silicon carbide semi-insulating substrates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2003 (English)In: Materials Science Forum Vols. 433-434, 2003, Vol. 433-4, 737-739 p.Conference paper, Published paper (Refereed)
Abstract [en]

DC and RF measurements for MESFET devices fabricated on three different 4H-SiC Semi-Insulating (SI) substrates are compared in this paper and the epilayers were grown simultaneously for all three wafers. The different wafers were processed during the same batch run. The MESFETs processed on the high-purity wafers showed less light sensitivity than those processed on the Vanadium doped wafer.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 737-739 p.
Keyword [en]
MESFET, semi-insulating substrate
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48558OAI: oai:DiVA.org:liu-48558DiVA: diva2:269454
Conference
ECSCRM 2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Eriksson, JensHenry, AnneMagnusson, BjörnJanzén, Erik

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