Simulation and measurement of switching characteristics of 4H-SiC buried-gate JFETs
2003 (English)Conference paper (Refereed)
Buried-gate junction field-effect transistors (JFETs) have been fabricated in 4H polytype silicon carbide (SiC). The dynamic switching characteristics of the JFETs in a circuit with inductive load have been characterized. The drain voltage rise/fall time of similar to30 ns and 25 ns have been observed for turn-off and turn-on, respectively. The results have been compared to numerical mixed-mode circuit simulations with finite element structures.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 773-776 p.
, Materials Science Forum, 433-436
junction field effect transistors, simulation, switching
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48559OAI: oai:DiVA.org:liu-48559DiVA: diva2:269455