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Simulation and measurement of switching characteristics of 4H-SiC buried-gate JFETs
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2003 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Buried-gate junction field-effect transistors (JFETs) have been fabricated in 4H polytype silicon carbide (SiC). The dynamic switching characteristics of the JFETs in a circuit with inductive load have been characterized. The drain voltage rise/fall time of similar to30 ns and 25 ns have been observed for turn-off and turn-on, respectively. The results have been compared to numerical mixed-mode circuit simulations with finite element structures.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 773-776 p.
Series
Materials Science Forum, 433-436
Keyword [en]
junction field effect transistors, simulation, switching
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48559OAI: oai:DiVA.org:liu-48559DiVA: diva2:269455
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-09

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Forsberg, UrbanJanzén, Erik

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