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Properties of different stacking faults that cause degradation in SiC PiN diodes
Linköping University, Faculty of Arts and Sciences. Linköping University, Department of Management and Economics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 913-916 p.Conference paper (Refereed)
Abstract [en]

The electrical degradation of 4H-SiC PiN diodes has recently attracted a large interest and is a critical material problem for high power applications. The degradation is observed as an increased forward voltage drop after forward injection operation. In this paper we present the identity, properties and origin of stacking faults with different nature that cause degradation of 4H-SiC PiN diodes.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 913-916 p.
Keyword [en]
4H-SiC, degradation, diode, stacking fault, synchrotron topography
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-48561OAI: diva2:269457
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-13

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Jacobson, HerbertHallin, ChristerJanzén, Erik
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