Properties of different stacking faults that cause degradation in SiC PiN diodes
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 913-916 p.Conference paper (Refereed)
The electrical degradation of 4H-SiC PiN diodes has recently attracted a large interest and is a critical material problem for high power applications. The degradation is observed as an increased forward voltage drop after forward injection operation. In this paper we present the identity, properties and origin of stacking faults with different nature that cause degradation of 4H-SiC PiN diodes.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 913-916 p.
4H-SiC, degradation, diode, stacking fault, synchrotron topography
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48561OAI: oai:DiVA.org:liu-48561DiVA: diva2:269457