liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Properties of different stacking faults that cause degradation in SiC PiN diodes
Linköping University, Faculty of Arts and Sciences. Linköping University, Department of Management and Economics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Show others and affiliations
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 913-916 p.Conference paper (Refereed)
Abstract [en]

The electrical degradation of 4H-SiC PiN diodes has recently attracted a large interest and is a critical material problem for high power applications. The degradation is observed as an increased forward voltage drop after forward injection operation. In this paper we present the identity, properties and origin of stacking faults with different nature that cause degradation of 4H-SiC PiN diodes.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 913-916 p.
Keyword [en]
4H-SiC, degradation, diode, stacking fault, synchrotron topography
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-48561OAI: diva2:269457
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-13

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Jacobson, HerbertHallin, ChristerJanzén, Erik
By organisation
Faculty of Arts and SciencesDepartment of Management and EconomicsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 18 hits
ReferencesLink to record
Permanent link

Direct link