New tunnel Schottky SiC devices using mixed conduction ceramics
2002 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 433-4, 949-952 p.Article in journal (Refereed) Published
A new tunnel Schottky diode based on SiC and a mixed conductor of BaSnO3 as the gate has been investigated. I-V curves at different operating temperatures and two different gas atmospheres have been measured. The device shows sensitivity to oxygen, with maximum at 400degreesC. A model that describes the behaviour of the device is proposed, which takes into account the different types of conduction of the BaSnO3 due to the temperature.
Place, publisher, year, edition, pages
2002. Vol. 433-4, 949-952 p.
BaSnO3, gas sensor, oxygen, Schottky diode, SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48563OAI: oai:DiVA.org:liu-48563DiVA: diva2:269459