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P-type 6H-SiC films in the creation of triode structures for low ionization radiation
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 969-972 p.Conference paper, Published paper (Refereed)
Abstract [en]

The signal value of the transistor-like detector on applied voltage was investigated. It was measure induced-current recording from fluxes of X-ray and optical quanta. A superlinear rise in the resulting signal was observed with increasing voltage. The signal was amplified by a factor of several tens with respect to the value chosen for normalization. A description in terms of the phototriode model gives acceptable values for the main parameters: base width, diffusion length of electrons, and space charge region of the collector. It is important that SiC films with the thickness d similar to 10 mum can be used to detect penetrating radiation, for example, X-ray. The effective thickness of the films exceeds d by the signal amplification factor (and proves to be in range of hundred mum).

Place, publisher, year, edition, pages
2003. Vol. 433-4, 969-972 p.
Keyword [en]
low ionization radiation, photocurrent, signal amplification, silicon carbide, sublimation epitaxy, triode structures, X-ray
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48567OAI: oai:DiVA.org:liu-48567DiVA: diva2:269463
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Lebedev, AlexanderYakimova, Rositsa

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Lebedev, AlexanderYakimova, Rositsa
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