Growth and characterization of epitaxial wurtzite Al1-xInxN thin films deposited by UHV reactive dual DC magnetron sputtering
2002 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 433-4, 987-990 p.Article in journal (Refereed) Published
Ternary Al1-xInxN thin films were grown by dual target direct current (DC) reactive magnetron sputtering under UHV conditions. The film compositions were determined to range from 0.30
Place, publisher, year, edition, pages
2002. Vol. 433-4, 987-990 p.
AlN, AllnN, cathodoluminescence, epitaxial growth, HREM, InN, magnetron sputtering, thin films, XRD
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48568OAI: oai:DiVA.org:liu-48568DiVA: diva2:269464