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Properties of AlN layers grown by sublimation epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 995-998 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial layers of aluminum nitride (AlN)less than or equal to 80 mum thick have been grown at the temperatures 1900 and 2100 degreesC on 10x10mm(2) 4H-SiC substrates via sublimation recondensation in a RF heated graphite furnace. The source material was polyerystalline sintered AlN. A maximum growth rate of 80 mum/h was achieved at 2100degreesC and seed to source separation of I mm. The surface morphology reflects the hexagonal symmetry of the seed that suggesting an epitaxial growth. All crystals show strong and well defined single crystalline XRD patterns. Only the (002) reflection positioned at around 36.04 was observed in symmetric Theta-2Theta scan. The rocking curves FWHM (full width half maximum) and peak positions arc reported.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 995-998 p.
Keyword [en]
AlN, growth rate, morphology, sublimation epitaxy, XRD
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48570OAI: oai:DiVA.org:liu-48570DiVA: diva2:269466
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Beshkova, MilenaBirch, JensKakanakova-Georgieva, AneliaYakimova, Rositsa

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Beshkova, MilenaBirch, JensKakanakova-Georgieva, AneliaYakimova, Rositsa
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