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Ionized impurity scattering in n -doped C60 thin films
Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany.
Technische Universität Dresden.
Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany, Heliatek GmbH, Liebigstraße 26, 01187 Dresden, Germany.
Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany, Heliatek GmbH, Liebigstraße 26, 01187 Dresden, Germany.
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 9Article in journal (Refereed) Published
Abstract [en]

Carrier transport in organic films is usually dominated by hopping process, leading to different temperature dependence from that of inorganic crystals. The aurhors demonstrate that n -doped C60 films show temperature dependence analogous to inorganic semiconductors. At low temperatures, the conductivity increases with temperature, around room temperature, a maximum is reached and then the conductivity decreases. These observations are confirmed by the dependence of mobility on doping level. In contrast to previous reports for organic thin films, the C60 films show a decrease of mobility with increasing doping levels, i.e., they follow the well-known Matthiessen rule which is generally observed in inorganic semiconductors. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 91, no 9
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-48655DOI: 10.1063/1.2776355OAI: oai:DiVA.org:liu-48655DiVA: diva2:269551
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-04-26

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Li, Fenghong

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