Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation
2002 (English)In: Journal of Electronic Materials, ISSN 0361-5235, Vol. 31, no 12, 1353-1356 p.Article in journal (Refereed) Published
The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.
Place, publisher, year, edition, pages
2002. Vol. 31, no 12, 1353-1356 p.
Au/SiC, photoemission, Schottky barriers, contacts, silicon carbide, surface treatment, capacitance-voltage, current-voltage
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48711OAI: oai:DiVA.org:liu-48711DiVA: diva2:269607