liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden MAX Lab Lund Univ, S-22100 Lund, Sweden.
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden MAX Lab Lund Univ, S-22100 Lund, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Show others and affiliations
2002 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 31, no 12, 1353-1356 p.Article in journal (Refereed) Published
Abstract [en]

The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.

Place, publisher, year, edition, pages
2002. Vol. 31, no 12, 1353-1356 p.
Keyword [en]
Au/SiC, photoemission, Schottky barriers, contacts, silicon carbide, surface treatment, capacitance-voltage, current-voltage
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48711OAI: oai:DiVA.org:liu-48711DiVA: diva2:269607
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

Open Access in DiVA

No full text

Authority records BETA

Virojanadara, ChariyaJohansson, LeifWahab, Qamar Ul

Search in DiVA

By author/editor
Virojanadara, ChariyaJohansson, LeifWahab, Qamar Ul
By organisation
The Institute of TechnologyMaterials Science Department of Physics, Chemistry and Biology
In the same journal
Journal of Electronic Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 86 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf