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Peculiarities of exciton-polaritons in GaN at different polarizations studied by mu-photoluminescence spectroscopy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
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2002 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 190, no 1, 205-211 p.Article in journal (Refereed) Published
Abstract [en]

We report on polariton properties in high quality thick GaN grown by hydride vapor phase epitaxy on c-sapphire. A strong fine is observed in the vicinity of the A exciton in T-polarization (k perpendicular to c, E parallel to the c-axis) by micro-photoluminescence (mu-PL). Comparison of the mu-PL and mu-reflectance spectra confirms the internal origin of the polariton emission. In the samples with low density of residual donors the enhancement of the a-polarized component is induced mostly by interbranch scattering which occurs, possibly., due to the complex structure of the exciton-polariton branches at k perpendicular to c. The Gamma(1)-Gamma(5) exciton splitting in the C band is determined by the mu-reflectance as similar to1 meV.

Place, publisher, year, edition, pages
2002. Vol. 190, no 1, 205-211 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-48722OAI: oai:DiVA.org:liu-48722DiVA: diva2:269618
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Shubina, TatianaPaskova, TanjaHoltz, Per-OlofMonemar, Bo

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