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Letter: Electrical properties of carbon nitride thin films: Role of morphology and hydrogen content
Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Carnegie Mellon Univ, Dept Chem Engn, Pittsburgh, PA 15213 USA.
Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Carnegie Mellon Univ, Dept Chem Engn, Pittsburgh, PA 15213 USA.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Carnegie Mellon Univ, Dept Chem Engn, Pittsburgh, PA 15213 USA.
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2002 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 31, no 9, L11-L15 p.957-961 p.Article in journal, Letter (Other academic) Published
Abstract [en]

The influence of hydrogen content and ambient humidity on the electrical properties of carbon nitride (CNX) films deposited by reactive magnetron sputtering from a graphite target in Ar discharges mixed with N-2 and H-2 at a substrate temperature of 350degreesC have been investigated. Carbon films deposited in pure Ar exhibit a dark resistivity at room temperature of similar to4 X 10(-2) Omegacm, while the resistivity is one order of magnitude lower for CN0.25 films deposited in pure N-2, due to their denser morphology. The increasing H-2 fraction in the discharge gas leads to an increased resistivity for all gas mixtures. This is most pronounced for the nitrogen-free films deposited in an Ar/H-2 mixture, where the resistivity increases by over four orders of magnitude. This can be related to a decreased electron mobility as H inhibits the formation of double bonds. After exposure to air, the resistivity increases with time through two different diffusion regimes. The measured electrical properties of the films are related to the apparent film microstructure, bonding nature, and ambient humidity.

Place, publisher, year, edition, pages
2002. Vol. 31, no 9, L11-L15 p.957-961 p.
Keyword [en]
carbon nitride, film, electrical properties, sputtering
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48772OAI: oai:DiVA.org:liu-48772DiVA: diva2:269668
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31Bibliographically approved

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Neidhardt, JörgHultman, Lars

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