Lateral enlargement of silicon carbide crystals
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 39-42 p.Conference paper (Refereed)
A new growth technique for lateral enlargement of silicon carbide crystals is presented. The technique is based on sublimation growth but modified with respect to temperature gradients and geometry as compared to conventional setup. Simulation of the temperature distribution for lateral growth as well as the growth mechanism is discussed. Synchrotron white beam x-ray topographs have been evaluated concerning threading defects along the 0001 direction. Finally, a comparison between laterally grown 4H, 6H-silicon carbide and a commercial 4H-silicon carbide wafer is demonstrated, and shows that this growth technique makes it possible to enlarge seed crystals without screw dislocations and micropipes along the 0001 direction.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 39-42 p.
4H-SiC, 6H-SiC, lateral growth
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48796OAI: oai:DiVA.org:liu-48796DiVA: diva2:269692