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Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
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2002 (English)In: Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002, Vol. 389-3, 191-194 p.Conference paper, Published paper (Refereed)
Abstract [en]

SiC epitaxy has been studied in a horizontal hot-wall CVD reactor with rotation by gas foil levitation. A capacity of three 2 inch wafers has been realized, and the thickness uniformity over a 2 inch wafer is below 1% and the n-doping uniformity over a 35mm wafer, below 10%. Both n- and p-type doping is readily achieved with no memory effect. The layer morphology has been investigated and a featureless surface has been obtained through process optimization and a modification of the hot zone.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 191-194 p.
Keyword [en]
CVD, doping, hot-wall, morphology, rotation, uniformity
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48797OAI: oai:DiVA.org:liu-48797DiVA: diva2:269693
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Forsberg, UrbanHenry, AnneKordina, OlleJanzén, Erik

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