Growth characteristics of SiC in a hot-wall CVD reactor with rotation
2002 (English)In: Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002, Vol. 389-3, 191-194 p.Conference paper (Refereed)
SiC epitaxy has been studied in a horizontal hot-wall CVD reactor with rotation by gas foil levitation. A capacity of three 2 inch wafers has been realized, and the thickness uniformity over a 2 inch wafer is below 1% and the n-doping uniformity over a 35mm wafer, below 10%. Both n- and p-type doping is readily achieved with no memory effect. The layer morphology has been investigated and a featureless surface has been obtained through process optimization and a modification of the hot zone.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 191-194 p.
CVD, doping, hot-wall, morphology, rotation, uniformity
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48797OAI: oai:DiVA.org:liu-48797DiVA: diva2:269693