Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD, Effect of process parameters
2002 (English)In: Proceedings of the International Conference on Silicon Carbide and Related Materials, Tsukuba, 2001 / [ed] S. Yoshida, S. Nishino, H. Harima and T. Kimoto, 2002, Vol. 389-3, 203-206 p.Conference paper (Refereed)
Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50°C. The highest atomic concentration of aluminum observed in this study was 3·1017 and 8·1018 cm-3 in Si and C-face, respectively.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 203-206 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol. 389-393
aluminum, CVD, doping, hot-wall, thermodynamical calculations
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48798ISBN: 08-7849-894-XOAI: oai:DiVA.org:liu-48798DiVA: diva2:269694
ICSCRM2001, International Conference on Silicon Carbide and Related Materials, October 28-November 2, 2001, Tsukuba, Japan