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Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD, Effect of process parameters
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-8116-9980
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Swedish Royal Institute of Technolology, Kista, Sweden.
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2002 (English)In: Proceedings of the International Conference on Silicon Carbide and Related Materials, Tsukuba, 2001 / [ed] S. Yoshida, S. Nishino, H. Harima and T. Kimoto, 2002, Vol. 389-3, 203-206 p.Conference paper, Published paper (Refereed)
Abstract [en]

Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50°C. The highest atomic concentration of aluminum observed in this study was 3·1017 and 8·1018 cm-3 in Si and C-face, respectively.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 203-206 p.
Series
Materials Science Forum, ISSN 0255-5476 ; Vol. 389-393
Keyword [en]
aluminum, CVD, doping, hot-wall, thermodynamical calculations
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48798ISBN: 08-7849-894-X (print)OAI: oai:DiVA.org:liu-48798DiVA: diva2:269694
Conference
ICSCRM2001, International Conference on Silicon Carbide and Related Materials, October 28-November 2, 2001, Tsukuba, Japan
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31Bibliographically approved

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Forsberg, UrbanDanielsson, ÖrjanHenry, AnneJanzén, Erik

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