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In situ etching of 4H-SiC in H-2 with addition of HCl for epitaxial CVD growth
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 239-242 p.Conference paper, Published paper (Refereed)
Abstract [en]

We have investigated in situ etching of 4H SiC in a horizontal hot-wall CVD reactor. A small amount of HCl is introduced together with the major etching gas, H-2. The etch rate is found to increase with temperature and decrease with pressure. An increased H-2 flow proportionally increases the etch rate. The etch mechanism is proposed from the etch rate dependencies on the etch parameters. The morphology both after the etch and after the subsequent growth is investigated and the optimized etch conditions for good morphology are established. The correlation between the morphology and the etch mechanism is pointed out.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 239-242 p.
Keyword [en]
CVD, etching, surface preparation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48801OAI: oai:DiVA.org:liu-48801DiVA: diva2:269697
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Kordina, OlleJanzén, Erik

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