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Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 259-262 p.Conference paper, Published paper (Refereed)
Abstract [en]

Characteristics of boron in as-grown 4H-SiC layers produced by fast epitaxy, i.e. sublimation and vertical hot-wall CVD, were studied by electrical and optical measurements. The boron-related contribution to the net acceptor concentration in the layers (as determined by CV on p-type residual doped sublimation epitaxy layers), the presence of deep boron centers (as indicated by DLTS) and boron-related "green" emission at similar to 505 nm (as observed by CL) are detected for various growth temperatures and C/Si ratios. The results are discussed in relation with the C vacancies in the lattice that may be affected by growth rate and input C/Si ratio in the CVD process.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 259-262 p.
Keyword [en]
boron, cathodoluminescence, C-V, DLTS, sublimation epitaxy, vertical hot-wall CVD
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48802OAI: oai:DiVA.org:liu-48802DiVA: diva2:269698
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-07

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Kakanakova-Georgieva, AneliaYakimova, RositsaStorasta, LiutaurasSyväjärvi, MikaelJanzén, Erik

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Kakanakova-Georgieva, AneliaYakimova, RositsaStorasta, LiutaurasSyväjärvi, MikaelJanzén, Erik
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