Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 259-262 p.Conference paper (Refereed)
Characteristics of boron in as-grown 4H-SiC layers produced by fast epitaxy, i.e. sublimation and vertical hot-wall CVD, were studied by electrical and optical measurements. The boron-related contribution to the net acceptor concentration in the layers (as determined by CV on p-type residual doped sublimation epitaxy layers), the presence of deep boron centers (as indicated by DLTS) and boron-related "green" emission at similar to 505 nm (as observed by CL) are detected for various growth temperatures and C/Si ratios. The results are discussed in relation with the C vacancies in the lattice that may be affected by growth rate and input C/Si ratio in the CVD process.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 259-262 p.
boron, cathodoluminescence, C-V, DLTS, sublimation epitaxy, vertical hot-wall CVD
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48802OAI: oai:DiVA.org:liu-48802DiVA: diva2:269698