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Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 283-286 p.Conference paper, Published paper (Refereed)
Abstract [en]

Effect of surface irregularities on defect nucleation and development in thick epitaxial layers of 4H-SiC has been investigated. It has been shown that during growth extended defects may undergo transformation and thus stacking faults can be formed, which is favored in thicker layers (e.g. 50mum). Network of misfit dislocations appears if the initial surface has a certain critical roughness and a lower surface energy. Evidence has been presented that well ordered graphite layer might form on the substrates during the preheating stage prior to growth via sublimation.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 283-286 p.
Keyword [en]
4H-SiC, epitaxial layers, extended defects, surface graphite layer
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48803OAI: oai:DiVA.org:liu-48803DiVA: diva2:269699
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-10

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Yakimova, RositsaSyväjärvi, MikaelKakanakova-Georgieva, AneliaIakimov, TihomirVirojanadara, ChariyaJohansson, LeifJanzén, Erik

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Yakimova, RositsaSyväjärvi, MikaelKakanakova-Georgieva, AneliaIakimov, TihomirVirojanadara, ChariyaJohansson, LeifJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
Engineering and Technology

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