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Behavior of micropipes during growth in 4H-SiC
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Aristotle Univ Thessaloniki, Dept Phys, GR-54006 Thessaloniki, Greece.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, p. 395-398Conference paper, Published paper (Refereed)
Abstract [en]

The disturbance of the growth steps in SiC epitaxy and the formation of stacking faults (SFs) in the vicinity of a micropipe were studied by Atomic Force Microscopy and Transmission Electron Microscopy. Shallow trenches are observed in front of the micropipes due to the distortion of the growth steps towards of the micropipe. The trenches are related with extended (1 (1) over bar 00) type SFs bounded by 1/6 < 11 (2) over bar1 > partial dislocations. These results are also supported by synchrotron X-ray topography.
Place, publisher, year, edition, pages
2002. Vol. 389-3, p. 395-398
Keywords [en]
micropipes, partial dislocations, stacking faults
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48804OAI: oai:DiVA.org:liu-48804DiVA, id: diva2:269700
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-07

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Yakimova, RositsaSyväjärvi, MikaelJanzén, Erik

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