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Structural defects in electrically degraded 4H-SiC PiN diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England ABB Corp Res, SE-72178 Vasteras, Sweden Univ Helsinki, Optoelect Lab, FI-02015 Helsinki, Finland.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 423-426 p.Conference paper, Published paper (Refereed)
Abstract [en]

Triangular structural defects, occasionally generated during long term operation of 4H-SiC pin diodes, are known to negatively affect the forward characteristics of the diode. We have used synchrotron white beam X-ray topography, scanning electron microscopy, in situ cathodo luminescence and transmission electron microscopy for characterizing the structure and formation mechanisms of such defects. It is shown from high-resolution images that the defect results from glide slip on the (0001) basal plane. The defect consists of a stacking fault bound by two partial dislocations with Burgers vectors 1/3<11 (1) over bar0> and 1/3<01 (1) over bar0>. The fault is a means for stress relaxation in the epilayer, near the contact layer using an existing dislocation as a nucleation source.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 423-426 p.
Keyword [en]
electron microscopy, stacking faults, structural defects, synchrotron topography
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48805OAI: oai:DiVA.org:liu-48805DiVA: diva2:269701
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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Persson, PerBergman, PederJanzén, ErikHultman, Lars

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