Theoretical investigation of an intrinsic defect in SiC
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 477-480 p.Conference paper (Refereed)
Ab initio calculation of the local vibrational modes of a carbon pair in the silicon vacancy (V-Si+2C) shows that it cannot be the origin of the D-II photoluminescence (PL) center, however, it seems likely, that this defect gives rise to the Ramanpeaks observed at 1080 and 1435 cm(-1) in proton irradiated samples. Occupation levels of the V-Si+2C defect are also predicted to facilitate experimental confirmation.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 477-480 p.
D-II center, intrinsic defects, Raman centers, theory
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48807OAI: oai:DiVA.org:liu-48807DiVA: diva2:269703