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The neutral silicon vacancy in SiC: Ligand hyperfine interaction
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 501-504 p.Conference paper, Published paper (Refereed)
Abstract [en]

The isolated silicon vacancy in its neutral charge state has unambiguously been confirmed in electron irradiated 4H and 6H SiC. This was achieved by the observation of the ligand hyperfine lines arising from interaction with C-13 atoms in the nearest-neighbor (NN) shell and With Si-29 atoms in the next-nearest-neighbor (NNN) shell in optically detected magnetic resonance (ODMR) experiments. The complete hyperfine tensors for all inequivalent lattice sites have been deduced and are compared to the known hyperfine parameters for the negatively charged silicon vacancy in the two polytypes.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 501-504 p.
Keyword [en]
electron irradiation, ligand hyperfine interaction, ODMR, silicon vacancy
National Category
Engineering and Technology Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-48808DOI: 10.4028/www.scientific.net/MSF.389-393.501OAI: oai:DiVA.org:liu-48808DiVA: diva2:269704
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2013-10-02

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Wagner, MatthiasSon, Nguyen TienHallin, ChristerChen, WeiminJanzén, Erik

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Wagner, MatthiasSon, Nguyen TienHallin, ChristerChen, WeiminJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and BiologyFunctional Electronic Materials
Engineering and TechnologyCondensed Matter Physics

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