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Properties of the UD-1 deep-level center in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 505-508 p.Conference paper, Published paper (Refereed)
Abstract [en]

Results from absorption measurements in semi-insulating 4H-SiC HTCVD-grown substrates show that the infrared absorption spectra is dominated by the UD-1 defect. The UD-1 spectrum has two sharp lines around I eV. The activation energy of the T-dependence of the resistivity in the semi-insulating material, which has a strong absorption by the UD-1 defect, is determined to be 1.4 eV. Photo-induced absorption measurements show that the absorption of the UD-1 defect increases when the sample is illuminated with 1.4 eV. When the energy of the exciting light reaches 1.85 eV the absorption intensity starts to decrease. In this way we have been able to correlate the electrical behavior (with a thermal activation energy of 1.4 eV) of the HTCVD 4H-SiC material with the UD-1 defect which we observe in luminescence and absorption measurements.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 505-508 p.
Keyword [en]
absorption, deep-level, FTIR, photo-induced absorption, semi-insulating SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48809OAI: oai:DiVA.org:liu-48809DiVA: diva2:269705
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-07

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Magnusson, BjörnJanzén, Erik

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