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Theoretical study of cubic polytype inclusions in 4H-SiC
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, Dept G, SE-72178 Vasteras, Sweden Lulea Univ Technol, Dept Math, SE-97187 Lulea, Sweden Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, Dept G, SE-72178 Vasteras, Sweden Lulea Univ Technol, Dept Math, SE-97187 Lulea, Sweden Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England.
2002 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-3, 533-536 p.Article in journal (Refereed) Published
Abstract [en]

First-principles density-functional calculations of the band structure and wave functions around narrow X-like inclusions in 4H-SiC have been performed. X-like inclusions of various thicknesses, corresponding to two, three, and four stacking faults in neighbouring basal planes, have been investigated. The results for the number of bound states in the inclusion, their energies, and wave functions are well described by a simple one-dimensional quantum-well square potential. The quantum-well property of these inclusions suggests that X-like regions in 4H-SiC are efficient planar traps for conduction band electrons.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 533-536 p.
Keyword [en]
first-principles calculations, polytype inclusions, stacking faults
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48814OAI: oai:DiVA.org:liu-48814DiVA: diva2:269710
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Lindefelt, Ulf

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