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Electrical activity of residual boron in silicon carbide
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 549-552 p.Conference paper, Published paper (Refereed)
Abstract [en]

Defects in high quality 4H silicon carbide epilayers have been studied using Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Both intrinsic defect related centers HS1, Z(1/2). EH6/EH7 and shallow and deep boron centers were found. Electrical properties of the boron related traps are analyzed. Comparison with the optical decay measurements shows that boron is related to the observed lateral variations of the minority carrier lifetime in low doped 4H-SiC epilayers.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 549-552 p.
Keyword [en]
boron, carrier lifetime, DLTS, MCTS, residual impurities
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48815OAI: oai:DiVA.org:liu-48815DiVA: diva2:269711
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-07

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Storasta, LiutaurasHallin, ChristerJanzén, Erik

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