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Incorporation of hydrogen (1H and 2H) into 4H-SiC during epitaxial growth
Royal Inst Technol, SE-16440 Kista, Stockholm, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 565-568 p.Conference paper, Published paper (Refereed)
Abstract [en]

The hydrogen depth distribution in 4H-SiC after epitaxial growth at 1600 degreesC has been studied in detail with secondary ion mass spectrometry. Both H-1 and H-2 have been employed as carrier gas to trace the origin of the incorporated hydrogen. In particular the substrate as a prospective hydrogen source has been considered. After growth H-2 is detected throughout the whole substrate (similar to400 mum) and a considerable quantity remains after annealing at 1500 degreesC for 15 minutes.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 565-568 p.
Keyword [en]
CVD, deuterium, hydrogen, SIMS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48817OAI: oai:DiVA.org:liu-48817DiVA: diva2:269713
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-09

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Forsberg, UrbanJensen, MonaJanzén, Erik

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Forsberg, UrbanJensen, MonaJanzén, Erik
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