Incorporation of hydrogen (1H and 2H) into 4H-SiC during epitaxial growth
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 565-568 p.Conference paper (Refereed)
The hydrogen depth distribution in 4H-SiC after epitaxial growth at 1600 degreesC has been studied in detail with secondary ion mass spectrometry. Both H-1 and H-2 have been employed as carrier gas to trace the origin of the incorporated hydrogen. In particular the substrate as a prospective hydrogen source has been considered. After growth H-2 is detected throughout the whole substrate (similar to400 mum) and a considerable quantity remains after annealing at 1500 degreesC for 15 minutes.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 565-568 p.
CVD, deuterium, hydrogen, SIMS
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48817OAI: oai:DiVA.org:liu-48817DiVA: diva2:269713