Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 593-596 p.Conference paper (Refereed)
We are using low temperature photoluminescence (LTPL) to evaluate the quality of SiC wafers and are able to characterize up to 2 inch diameter wafers (with or without epilayers) at low temperature (2K). Polytype maps for bulk material can be drawn, as well as nitrogen concentration maps for both bulk and epilayer wafers in the very large doping range available today (from low 10(14) cm(-3) to 10(19) cm(-3)).
Place, publisher, year, edition, pages
2002. Vol. 389-3, 593-596 p.
doping, photoluminescence, polytypes
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48818OAI: oai:DiVA.org:liu-48818DiVA: diva2:269714