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Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-58330 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 593-596 p.Conference paper, Published paper (Refereed)
Abstract [en]

We are using low temperature photoluminescence (LTPL) to evaluate the quality of SiC wafers and are able to characterize up to 2 inch diameter wafers (with or without epilayers) at low temperature (2K). Polytype maps for bulk material can be drawn, as well as nitrogen concentration maps for both bulk and epilayer wafers in the very large doping range available today (from low 10(14) cm(-3) to 10(19) cm(-3)).

Place, publisher, year, edition, pages
2002. Vol. 389-3, 593-596 p.
Keyword [en]
doping, photoluminescence, polytypes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48818OAI: oai:DiVA.org:liu-48818DiVA: diva2:269714
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

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Henry, AnneForsberg, UrbanMagnusson, BjörnPozina, GaliaJanzén, Erik

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