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Adsorption of metastable molecular oxygen on SiC(0001)-root 3 x root 3
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2002 (English)In: Materials Science forum, Vols. 389-393, 2002, Vol. 389-3, 697-700 p.Conference paper, Published paper (Refereed)
Abstract [en]

Photoemission studies of initial oxygen adsorption on the SiC (0001)-root3xroot 3 surface at different temperatures are reported. After exposures of 0.1 L to 10 L with the sample at room temperature or cooled to ca. 100 K structures appear in the 0 Is spectrum that are identified to originate from metastable oxygen. Adsorption of metastable molecular oxygen is suggested from the similarities obtained with earlier findings on Si (111)-7x7.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 697-700 p.
Keyword [en]
initial adsorption, metastable molecular oxygen, SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48820OAI: oai:DiVA.org:liu-48820DiVA: diva2:269716
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-10

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Virojanadara, ChariyaJohansson, Leif

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Virojanadara, ChariyaJohansson, Leif
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