Adsorption of metastable molecular oxygen on SiC(0001)-root 3 x root 3
2002 (English)In: Materials Science forum, Vols. 389-393, 2002, Vol. 389-3, 697-700 p.Conference paper (Refereed)
Photoemission studies of initial oxygen adsorption on the SiC (0001)-root3xroot 3 surface at different temperatures are reported. After exposures of 0.1 L to 10 L with the sample at room temperature or cooled to ca. 100 K structures appear in the 0 Is spectrum that are identified to originate from metastable oxygen. Adsorption of metastable molecular oxygen is suggested from the similarities obtained with earlier findings on Si (111)-7x7.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 697-700 p.
initial adsorption, metastable molecular oxygen, SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48820OAI: oai:DiVA.org:liu-48820DiVA: diva2:269716