Oxidation states present on SiC (0001) after oxygen exposure
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 701-704 p.Conference paper (Refereed)
Core level photoemission experiments using synchrotron radiation were performed in order to study the properties of the SiO2/SiC interface on Si-terminated 4H-SiC surfaces after different oxygen exposures. The surfaces were oxidized gradually from 1 - 1.2x10(6) L at both room temperature (RT) and at 800degreesC. Recorded Si 2p and C Is spectra show only two oxidation states, Si+1 and Si+4, at both temperatures and no carbon containing by-product at the interface after the largest exposure investigated, 1.2x10(6) L. A clean and well ordered 3 surface is shown to be possible to re-create by in situ heating even after the largest oxygen exposures made at 800degreesC.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 701-704 p.
intermediate oxidation states, oxidation, SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48821OAI: oai:DiVA.org:liu-48821DiVA: diva2:269717