liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Oxidation states present on SiC (0001) after oxygen exposure
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 701-704 p.Conference paper, Published paper (Refereed)
Abstract [en]

Core level photoemission experiments using synchrotron radiation were performed in order to study the properties of the SiO2/SiC interface on Si-terminated 4H-SiC surfaces after different oxygen exposures. The surfaces were oxidized gradually from 1 - 1.2x10(6) L at both room temperature (RT) and at 800degreesC. Recorded Si 2p and C Is spectra show only two oxidation states, Si+1 and Si+4, at both temperatures and no carbon containing by-product at the interface after the largest exposure investigated, 1.2x10(6) L. A clean and well ordered 3 surface is shown to be possible to re-create by in situ heating even after the largest oxygen exposures made at 800degreesC.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 701-704 p.
Keyword [en]
intermediate oxidation states, oxidation, SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48821OAI: oai:DiVA.org:liu-48821DiVA: diva2:269717
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-10

Open Access in DiVA

No full text

Authority records BETA

Virojanadara, ChariyaJohansson, Leif

Search in DiVA

By author/editor
Virojanadara, ChariyaJohansson, Leif
By organisation
The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 27 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf