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Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density
Technol & Devices Int Inc, Gaithersburg, MD 20877 USA N Carolina State Univ, Raleigh, NC 27695 USA Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
Technol & Devices Int Inc, Gaithersburg, MD 20877 USA N Carolina State Univ, Raleigh, NC 27695 USA Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1173-1176 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper we report on 2 mm diameter diodes fabricated with high device yield on 2 inch 4H-SiC wafers with reduced micropipe density (RMD). Micropipe density in 4H-SiC wafers was reduced using micropipe-filling technique. Low doped n-type layers were grown on RMD substrates by chemical vapor deposition (CVD). Schottky diodes were formed by Ni evaporation on CVD grown layers. Pn diodes were formed by sublimation growth of p(+)-layer on CVD grown layer. Mesa edge termination and no edge termination were used for pn diodes and Schottky diodes respectively. Both types of diodes demonstrated a maximum breakdown voltage of about 1000 V.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 1173-1176 p.
Keyword [en]
micropipe healing, Schottky diodes, silicon carbide power diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48824OAI: oai:DiVA.org:liu-48824DiVA: diva2:269720
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Yakimova, RositsaHenry, AnneJanzén, Erik

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