4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1215-1218 p.Conference paper (Refereed)
Vertical 4H- and 6H-SiC MOSFETs have been fabricated on sloped sidewalls formed by molten KOH etching, which is expected to be free from the damage onto a channel region caused by a dry etching process. The slope angle could be controlled by adjusting etching temperature, and the anisotropy of inversion channel mobility was investigated. A higher inversion channel mobility and a lower threshold voltage were observed with increasing slope angle of channel region toward (1 (1) over bar 00) or (11 (2) over bar0). The highest mobility was 32 cm(2)/Vs for 6H-SiC, which is relatively high as an inversion channel mobility of UMOSFETs compared to previous works. The dependence of device performance on the slope angle and crystal orientation is discussed.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 1215-1218 p.
anisotropy, channel mobility, KOH etching, MOSFETs
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48825OAI: oai:DiVA.org:liu-48825DiVA: diva2:269721