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Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers
Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1285-1288 p.Conference paper, Published paper (Refereed)
Abstract [en]

High-temperature chemical vapour deposition (HTCVD) in a vertical chimney reactor was used to grow thick low-doped epitaxial layers of 4H silicon carbide. These layers were used as drift layers in a combined process to manufacture both bipolar and unipolar high-voltage diodes. The resulting diodes were characterized electrically in order to gain knowledge about the electric quality of the HTCVD epitaxial layers to assess the high-voltage properties of this material.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 1285-1288 p.
Keyword [en]
breakdown, degradation, diodes, HTCVD, MPS, PiN, Schottky
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48827OAI: oai:DiVA.org:liu-48827DiVA: diva2:269723
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Henry, Anne

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