Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1285-1288 p.Conference paper (Refereed)
High-temperature chemical vapour deposition (HTCVD) in a vertical chimney reactor was used to grow thick low-doped epitaxial layers of 4H silicon carbide. These layers were used as drift layers in a combined process to manufacture both bipolar and unipolar high-voltage diodes. The resulting diodes were characterized electrically in order to gain knowledge about the electric quality of the HTCVD epitaxial layers to assess the high-voltage properties of this material.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 1285-1288 p.
breakdown, degradation, diodes, HTCVD, MPS, PiN, Schottky
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48827OAI: oai:DiVA.org:liu-48827DiVA: diva2:269723