Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1337-1340 p.Conference paper (Refereed)
Silicon Carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximum current gain of approximately 10 times, and a breakdown voltage of up to 600 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 degreesC, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. Physical device simulations have been used to analyze the measured data. The thermal conductivity is fitted to model the measured self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 1337-1340 p.
bipolar transistors, breakdown voltage, thermal conductivity
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48828OAI: oai:DiVA.org:liu-48828DiVA: diva2:269724