liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, SE-16440 Kista, Sweden Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan.
SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, SE-16440 Kista, Sweden Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Show others and affiliations
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1419-1422 p.Conference paper, Published paper (Refereed)
Abstract [en]

We present here the effect of a hydrogen anneal at 600degreesC for Schottky sensor devices based on n- and p-type 4H SiC. The devices have gate contacts of Ta/Pt, or TaSix/Pt. The catalytic metal gate dissociates hydrogen and thus promotes diffusion of hydrogen atoms into the SiC, where the atoms will trap or react with different impurities, defects or surface states. This will change parameters such as the carrier concentrations, the defect density of the material or the surface resistivity at the SiC/SiO2 interface. The current-voltage and the capacitance-voltage characteristics were measured before and after annealing in hydrogen and oxygen containing atmosphere, and the results show a reversible effect in the I-V characteristics.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 1419-1422 p.
Keyword [en]
annealing, gas sensors, high temperature, hydrogen diffusion, Schottky diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48831OAI: oai:DiVA.org:liu-48831DiVA: diva2:269727
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

Open Access in DiVA

No full text

Authority records BETA

Unéus, LarsJensen, MonaYakimova, RositsaSyväjärvi, MikaelHenry, AnneJanzén, ErikEkedahl, Lars-GunnarLloyd-Spets, Anita

Search in DiVA

By author/editor
Unéus, LarsJensen, MonaYakimova, RositsaSyväjärvi, MikaelHenry, AnneJanzén, ErikEkedahl, Lars-GunnarLloyd-Spets, Anita
By organisation
The Institute of TechnologyApplied Physics Department of Physics, Chemistry and BiologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 207 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf