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The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, SE-16440 Kista, Sweden Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan.
SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, SE-16440 Kista, Sweden Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, p. 1419-1422Conference paper, Published paper (Refereed)
Abstract [en]

We present here the effect of a hydrogen anneal at 600degreesC for Schottky sensor devices based on n- and p-type 4H SiC. The devices have gate contacts of Ta/Pt, or TaSix/Pt. The catalytic metal gate dissociates hydrogen and thus promotes diffusion of hydrogen atoms into the SiC, where the atoms will trap or react with different impurities, defects or surface states. This will change parameters such as the carrier concentrations, the defect density of the material or the surface resistivity at the SiC/SiO2 interface. The current-voltage and the capacitance-voltage characteristics were measured before and after annealing in hydrogen and oxygen containing atmosphere, and the results show a reversible effect in the I-V characteristics.

Place, publisher, year, edition, pages
2002. Vol. 389-3, p. 1419-1422
Keywords [en]
annealing, gas sensors, high temperature, hydrogen diffusion, Schottky diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48831OAI: oai:DiVA.org:liu-48831DiVA, id: diva2:269727
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2021-09-30
In thesis
1. Development and Characterisation of SiC Based Sensors for Harsh Environments
Open this publication in new window or tab >>Development and Characterisation of SiC Based Sensors for Harsh Environments
2002 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The introduction of chemical gas sensors in our environment is a process that started many years ago. However, although the process has been rather slow over the years, the interest for chemical gas sensors is rising due to the growing environmental awareness. The need to measure gas components in our surrounding is becoming more and more important as the technological level increases in the world.

The development of gas sensors for different type of combustion control has been the focus in this thesis. To be able to measure in harsh environments such as flue gases or diesel exhausts, extremely robust sensors have to be developed. By using silicon carbide, a wide band gap material and chemically inert material, sensors that can withstand the harsh environment was developed and manufactured. Since SiC is a rather new material in the world of sensors, a great deal of work was performed on the design and basic understanding of the device. Several different ohmic contacts were studied thoroughly and it was shown that the ohmic contacts on the device could be improved. The effect of hydrogen diffusion into a SiC gas sensor device has also been investigated.

Much effort was spent on optimisation of the design and measurement parameters for the sensor when detecting different gas components. The device design parameters are the choice of catalytic metal for the sensor, the thickness of the metal and the porosity of the metal. The operating parameters are the sensor temperature and the annealing procedure before use. It was shown that different pre-treatment of the sensor could have large influence on the ammonia response.

Selected gas sensors were used in the flue gas project where the intention is to use the information about the gas concentrations to regulate the boiler for a better power-economy. SiC based Schottky diodes or transistors combined with commercial sensors and a linear lambda sensor was used in a high temperature electronic nose to measure in the flue gases. By using multivariate methods it was possible to evaluate the large amount of data from the continuous measurements in the flue gases. The results showed that it might be possible to use a small array of different gas sensors to identify different modes of operation of the boiler. Furthermore, predictions of the concentrations of a few specific gas components in the flue gases could be made.

Place, publisher, year, edition, pages
Linköping: Linköping University, 2002. p. 51
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 736
National Category
Other Materials Engineering
Identifiers
urn:nbn:se:liu:diva-179724 (URN)9173732664 (ISBN)
Public defence
2002-03-01, Planck, Fysikhuset, Linköpings universitet, Linköping, 10:15
Opponent
Note

In collaboration with S-SENCE.

All or some of the partial works included in the dissertation are not registered in DIVA and therefore not linked in this post.

Available from: 2021-09-30 Created: 2021-09-30 Last updated: 2023-03-03Bibliographically approved

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Unéus, LarsJensen, MonaYakimova, RositsaSyväjärvi, MikaelHenry, AnneJanzén, ErikEkedahl, Lars-GunnarLloyd-Spets, Anita

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