liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Show others and affiliations
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1423-1426 p.Conference paper, Published paper (Refereed)
Abstract [en]

Schottky diode gas sensors were fabricated on top of the epitaxial layer grown by three different methods, purchased from Cree Research Inc., by hot wall CVD, or by sublimation at a high growth rate. The epitaxial layers have different thickness and doping. The current-voltage characteristics of the gas sensors were compared in different gas ambient during operation in the high temperature region. The temperature dependence of the series resistance of the diodes revealed two types of carrier scattering mechanisms, impurity scattering for the sublimation epitaxial layer at 300-400degreesC and at 400-600degreesC, lattice scattering for all diodes. The ideality factor of the diode fabricated on the Cree substrate is higher than others. The higher ideality factor gives rise to a larger forward voltage change for a change in gas ambient. The amount of change in barrier height caused by a change in the ambient gas is almost the same for the three types of diodes. The value of the barrier height of the diode grown by the sublimation method is lower than for the others, which gives a higher reverse saturation current at temperatures above 400degreesC. The largest saturation current also shows the largest current change when switching between different gas atmospheres.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 1423-1426 p.
Keyword [en]
epitaxial layers, gas sensors, high temperature, resistance, scattering, Schottky diodes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48832OAI: oai:DiVA.org:liu-48832DiVA: diva2:269728
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

Open Access in DiVA

No full text

Authority records BETA

Unéus, LarsLundström, IngemarEkedahl, Lars-GunnarYakimova, RositsaSyväjärvi, MikaelHenry, AnneJanzén, ErikLloyd-Spets, Anita

Search in DiVA

By author/editor
Unéus, LarsLundström, IngemarEkedahl, Lars-GunnarYakimova, RositsaSyväjärvi, MikaelHenry, AnneJanzén, ErikLloyd-Spets, Anita
By organisation
The Institute of TechnologyApplied Physics Department of Physics, Chemistry and BiologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 214 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf