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Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, Elect & High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan.
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1493-1496 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on a study of radiative recombination in In0.11Ga0.89N/In.0.01Ga0.99N multiple quantum wells (MQWs). The QWs were nominally undoped, while the InGaN barriers were Si doped. The MQW part is situated in the depletion field of a pn-junction structure with electrical contacts, so that both photoluminescence (PL) and electroluminescence (EL) can be studied as a function of bias. The PL and EL spectra are distinctly different, in particular at low temperatures. The spectral properties and related differences in PL decay times reflect different recombination conditions in the MQW region for the individual QWs.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 1493-1496 p.
Keyword [en]
electroluminescence, GaN, InGaN, LEDs, multiple quantum wells, photoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48836OAI: oai:DiVA.org:liu-48836DiVA: diva2:269732
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

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Bergman, PederPozina, GaliaMonemar, Bo

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