Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, 1493-1496 p.Conference paper (Refereed)
We report on a study of radiative recombination in In0.11Ga0.89N/In.0.01Ga0.99N multiple quantum wells (MQWs). The QWs were nominally undoped, while the InGaN barriers were Si doped. The MQW part is situated in the depletion field of a pn-junction structure with electrical contacts, so that both photoluminescence (PL) and electroluminescence (EL) can be studied as a function of bias. The PL and EL spectra are distinctly different, in particular at low temperatures. The spectral properties and related differences in PL decay times reflect different recombination conditions in the MQW region for the individual QWs.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 1493-1496 p.
electroluminescence, GaN, InGaN, LEDs, multiple quantum wells, photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48836OAI: oai:DiVA.org:liu-48836DiVA: diva2:269732