Effect of high-energy Si+ ion irradiation on the crystallization behavior of amorphous strontium titanate films
2002 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 191, 226-229 p.Article in journal (Refereed) Published
Amorphous strontium titanate (STO) films deposited on Si substrates by magnetron sputtering at room temperature were irradiated with 2 MeV Si ions at doses of 5 x 10(16)-1.5 x 10(17) Si+/cm(2) and post-annealed at 450 degreesC in vacuum. The compositional and structural changes of STO films after the ion irradiation were examined by Rutherford backscattering spectrometry, scanning electron microscopy and X-ray diffraction measurements. The Sr:Ti:O ratio of the as-deposited films was found to be approximately 0.8:1:3. Ion irradiation did not affect the amount of Sr and Ti significantly and the films remained amorphous. After annealing, however, the formation of STO crystals was observed and Sr and O were slightly lost from the films. As compared to the un-irradiated STO films, the ion-irradiated ones showed significantly enhanced crystallization behaviors upon vacuum annealing. (C) 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 191, 226-229 p.
SrTiO3 crystals, ion irradiation, crystallization of amorphous film, post-annealing
IdentifiersURN: urn:nbn:se:liu:diva-48865OAI: oai:DiVA.org:liu-48865DiVA: diva2:269761