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Semiconductor-metal-semiconductor transition: valence band photoemission study of Ag/Si(111) surfaces
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
2002 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 190, no 1-4, 103-107 p.Article in journal (Refereed) Published
Abstract [en]

The root3 x root3, root21 x root21 and 6 x 6 phases of Ag/Si(111) have been studied by angle-resolved photoemission and low-energy electron diffraction. The Ag/Si(111) root3 x root3 surface has an intrinsic semiconducting character with two fully occupied, dispersing surface state bands. We find that only one of the additional surface bands on the root21 x root21 surface is metallic in contrast to the two metallic bands discussed in the literature. On the 6 x 6 surface, the partially occupied surface band of the root21 x root21 surface seems to be absent, resulting in a gap of about 0.2 eV with respect to the Fermi-level. (C) 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2002. Vol. 190, no 1-4, 103-107 p.
Keyword [en]
Ag/Si(111) surfaces, LEED, surface states, ARPES
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48882DOI: 10.1016/S0169-4332(01)00848-0ISI: 000176520700019OAI: oai:DiVA.org:liu-48882DiVA: diva2:269778
Conference
8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8, Sapporo, Japan, June 10-15 2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12Bibliographically approved

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Zhang, HanminUhrberg, Roger

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