Semiconductor-metal-semiconductor transition: valence band photoemission study of Ag/Si(111) surfaces
2002 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 190, no 1-4, 103-107 p.Article in journal (Refereed) Published
The root3 x root3, root21 x root21 and 6 x 6 phases of Ag/Si(111) have been studied by angle-resolved photoemission and low-energy electron diffraction. The Ag/Si(111) root3 x root3 surface has an intrinsic semiconducting character with two fully occupied, dispersing surface state bands. We find that only one of the additional surface bands on the root21 x root21 surface is metallic in contrast to the two metallic bands discussed in the literature. On the 6 x 6 surface, the partially occupied surface band of the root21 x root21 surface seems to be absent, resulting in a gap of about 0.2 eV with respect to the Fermi-level. (C) 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
Elsevier, 2002. Vol. 190, no 1-4, 103-107 p.
Ag/Si(111) surfaces, LEED, surface states, ARPES
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48882DOI: 10.1016/S0169-4332(01)00848-0ISI: 000176520700019OAI: oai:DiVA.org:liu-48882DiVA: diva2:269778
8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8, Sapporo, Japan, June 10-15 2001