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Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures
Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology.ORCID iD: 0000-0003-2749-8008
Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
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2002 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 190, no 1-4, 403-407 p.Article in journal (Refereed) Published
Abstract [en]

The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature rang, of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. (C) 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 190, no 1-4, 403-407 p.
Keyword [en]
Si, SiGe, Schottky barrier, superlattice, amorphous, electrical behaviour
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48883OAI: oai:DiVA.org:liu-48883DiVA: diva2:269779
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Järrendahl, Kenneth

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