Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures
2002 (English)In: Applied Surface Science, ISSN 0169-4332, Vol. 190, no 1-4, 403-407 p.Article in journal (Refereed) Published
The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature rang, of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. (C) 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 190, no 1-4, 403-407 p.
Si, SiGe, Schottky barrier, superlattice, amorphous, electrical behaviour
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48883OAI: oai:DiVA.org:liu-48883DiVA: diva2:269779