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Oxidation studies of 4H-SiC(0001) and (0001)
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2002 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 505, no 1-3, 358-366 p.Article in journal (Refereed) Published
Abstract [en]

The results of a photoemission study of Si- and C-terminated 4H SiC surfaces after different oxygen exposures are presented and discussed. The surfaces were oxidized gradually from 1 to 1.2 x 10(6) L at both room temperature and at 800 degreesC. Recorded Si 2p and C 1s spectra show at both temperatures only two oxidations states, Si1- and Si4- for the Si-terminated surface and Si2+ and Si4+ for the C-terminated surface, For the Si-terminated surface, no carbon containing by-product can be detected at the interface or at the surface after the largest exposure investigated. For the C-terminated surface, oxygen exposures are shown to affect the surface related carbon components quite strongly and the Si2+ oxidation state is interpreted to originate from a mixture of Si-O-C bonding, The surface/interface related carbon decreases dramatically after the largest exposure investigated but is not eliminated as on the Si-terminated surface. For the latter, a clean and well ordered root3 surface is shown to be possible to re-create by in situ heating even after the largest oxygen exposures made. (C) 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2002. Vol. 505, no 1-3, 358-366 p.
Keyword [en]
silicon carbide, oxidation, silicon oxides, photoemission (total yield)
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-48906DOI: 10.1016/S0039-6028(02)01154-8OAI: diva2:269802
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-05-03

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Virojanadara, ChariyaJohansson, Leif
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
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