Oxidation studies of 4H-SiC(0001) and (0001)
2002 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 505, no 1-3, 358-366 p.Article in journal (Refereed) Published
The results of a photoemission study of Si- and C-terminated 4H SiC surfaces after different oxygen exposures are presented and discussed. The surfaces were oxidized gradually from 1 to 1.2 x 10(6) L at both room temperature and at 800 degreesC. Recorded Si 2p and C 1s spectra show at both temperatures only two oxidations states, Si1- and Si4- for the Si-terminated surface and Si2+ and Si4+ for the C-terminated surface, For the Si-terminated surface, no carbon containing by-product can be detected at the interface or at the surface after the largest exposure investigated. For the C-terminated surface, oxygen exposures are shown to affect the surface related carbon components quite strongly and the Si2+ oxidation state is interpreted to originate from a mixture of Si-O-C bonding, The surface/interface related carbon decreases dramatically after the largest exposure investigated but is not eliminated as on the Si-terminated surface. For the latter, a clean and well ordered root3 surface is shown to be possible to re-create by in situ heating even after the largest oxygen exposures made. (C) 2002 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2002. Vol. 505, no 1-3, 358-366 p.
silicon carbide, oxidation, silicon oxides, photoemission (total yield)
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48906DOI: 10.1016/S0039-6028(02)01154-8OAI: oai:DiVA.org:liu-48906DiVA: diva2:269802