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Type-I optical emissions in GeSi quantum dots
Intituto de Física Gleb Wataghin, Unicamp, CP 6165, Campinas, São Paulo 13083-970, Brazil.
Intituto de Física Gleb Wataghin, Unicamp, CP 6165, Campinas, São Paulo 13083-970, Brazil.
Intituto de Física Gleb Wataghin, Unicamp, CP 6165, Campinas, São Paulo 13083-970, Brazil.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, no 5Article in journal (Refereed) Published
Abstract [en]

The authors studied the optical emission of GeSi quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 °C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 91, no 5
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-48911DOI: 10.1063/1.2764113OAI: oai:DiVA.org:liu-48911DiVA: diva2:269807
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-11

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Larsson, MatsElfving, AndersHansson, GöranNi, Wei-XinHoltz, Per-Olof

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