Type-I optical emissions in GeSi quantum dots
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, no 5Article in journal (Refereed) Published
The authors studied the optical emission of GeSi quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 °C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. © 2007 American Institute of Physics.
Place, publisher, year, edition, pages
2007. Vol. 91, no 5
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48911DOI: 10.1063/1.2764113OAI: oai:DiVA.org:liu-48911DiVA: diva2:269807