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Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition
Materials Chemistry, RWTH Aachen University, D-52056 Aachen, Germany.
Materials Chemistry, RWTH Aachen University, D-52056 Aachen, Germany.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2007 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, Vol. 25, no 4, 831-836 p.Article in journal (Refereed) Published
Abstract [en]

Alumina thin films were deposited onto tempered hot working steel substrates from an Al Cl3 - O2 -Ar- H2 gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion. © 2007 American Vacuum Society.

Place, publisher, year, edition, pages
2007. Vol. 25, no 4, 831-836 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-48933DOI: 10.1116/1.2748802OAI: oai:DiVA.org:liu-48933DiVA: diva2:269829
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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Trinh, DavidHultman, Lars

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