Micro-photoluminescence spectroscopy of exciton-polaritons in GaN with the wave vector k normal to the c-axis
2001 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 228, no 2, 481-484 p.Article in journal (Refereed) Published
We report on polarized micro-photoluminescence (mu -PL) and micro-reflectance (mu -R) studies of GaN layers grown by HVPE. A strong pi -polarized component in the vicinity of A exciton is observed in the mu -PL and attributed as a mixture of a bound B exciton, dominating at low temperature, and scattered A exciton-polariton states prevailing at higher temperatures. Temperature variation of exciton energies in the mu -R spectra reveals strain-induced difference between the top surface and the cleaved edges.
Place, publisher, year, edition, pages
2001. Vol. 228, no 2, 481-484 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49026OAI: oai:DiVA.org:liu-49026DiVA: diva2:269922