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Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Calif Santa Barbara, Mat & ECE Dept, Santa Barbara, CA 93106 USA.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Calif Santa Barbara, Mat & ECE Dept, Santa Barbara, CA 93106 USA.
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2001 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 228, no 2, 485-488 p.Article in journal (Refereed) Published
Abstract [en]

GaN epilayers grown by molecular-beam epitaxy (MBE) have been studied by temperature dependent time-resolved photoluminescence (PL). The PL decay times for free excitons and donor-bound excitons as well as the quantum efficiency have been measured for different temperatures. Radiative and nonradiative lifetimes have been evaluated from experimental values for the quantum efficiency and the PL decay time, assuming fully radiative processes at 2 K. The so obtained temperature dependence for the radiative lifetime cannot be described by a simple T-3/2 law for the whole temperature range. The temperature behavior of radiative lifetimes suggests the presence of a strong nonradiative recombination channel even at very low temperatures.

Place, publisher, year, edition, pages
2001. Vol. 228, no 2, 485-488 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49027OAI: oai:DiVA.org:liu-49027DiVA: diva2:269923
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Pozina, GaliaMonemar, Bo

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