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Mass transport growth and properties of hydride vapour phase epitaxy GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linkoping Univ, S-58183 Linkoping, Sweden Macquarie Univ, Sydney, NSW 2109, Australia Chalmers Univ Technol, S-41296 Gothenburg, Sweden Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria HMA, Dept Elect, S-16440 Kista, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 188, no 1, 447-451 p.Article in journal (Refereed) Published
Abstract [en]

We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.

Place, publisher, year, edition, pages
2001. Vol. 188, no 1, 447-451 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49046OAI: oai:DiVA.org:liu-49046DiVA: diva2:269942
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, TanjaPaskov, PlamenDarakchieva, VanyaWahab, Qamar Ul

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