Mass transport growth and properties of hydride vapour phase epitaxy GaN
2001 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 188, no 1, 447-451 p.Article in journal (Refereed) Published
We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.
Place, publisher, year, edition, pages
2001. Vol. 188, no 1, 447-451 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49046OAI: oai:DiVA.org:liu-49046DiVA: diva2:269942