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Optical characterization of InGaN/GaN MQW structures without in phase separation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2001 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 228, no 1, 157-160 p.Article in journal (Refereed) Published
Abstract [en]

Photoluminescence and cathodoluminescence spectroscopies are used to investigate the properties of the band edge emission of InGaN/(In)GaN multiple quantum well (MQW) structures which do not show evidence of phase separation in high resolution electron microscopy. The data still show a clear low energy peak in the spectra. about 0.1 eV below the main exciton peak. Possible interpretations of this second peak are discussed.

Place, publisher, year, edition, pages
2001. Vol. 228, no 1, 157-160 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49050OAI: oai:DiVA.org:liu-49050DiVA: diva2:269946
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

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Monemar, BoPaskov, PlamenPozina, GaliaPaskova, Tanja

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