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Carbon-oxygen-related complexes in irradiated and heat-treated silicon: IR absorption studies
Byelarussian Acad Sci, Inst Solid State & Semicond Phys, BY-220072 Minsk, Byelarus UMIST, Ctr Elect Mat, Manchester M60 1QD, Lancs, England Lund Univ, SE-22100 Lund, Sweden Natl Def Res Estab, SE-58111 Linkoping, Sweden Royal Inst Technol, SE-16440 Kista, Sweden.
Byelarussian Acad Sci, Inst Solid State & Semicond Phys, BY-220072 Minsk, Byelarus UMIST, Ctr Elect Mat, Manchester M60 1QD, Lancs, England Lund Univ, SE-22100 Lund, Sweden Natl Def Res Estab, SE-58111 Linkoping, Sweden Royal Inst Technol, SE-16440 Kista, Sweden.
Byelarussian Acad Sci, Inst Solid State & Semicond Phys, BY-220072 Minsk, Byelarus UMIST, Ctr Elect Mat, Manchester M60 1QD, Lancs, England Lund Univ, SE-22100 Lund, Sweden Natl Def Res Estab, SE-58111 Linkoping, Sweden Royal Inst Technol, SE-16440 Kista, Sweden.
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2002 (English)In: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 82-84, 57-62 p.Article in journal (Refereed) Published
Abstract [en]

Carbon-oxygen-related complexes in Si crystals enriched with either oxygen (O-16,O-18) or carbon (C-12, C-13) isotopes were investigated by Fourier Transform infrared absorption spectroscopy. The samples were irradiated with electrons at room temperature as well as at elevated temperatures (400-600 degreesC). The oxygen isotopic shifts of the local vibrational modes related to C3 and C4 centers were determined. Several new lines were found to appear after irradiation at elevated temperatures. Possible assignments of them are suggested.

Place, publisher, year, edition, pages
2002. Vol. 82-84, 57-62 p.
Keyword [en]
carbon, complexes, local vibrational modes, oxygen, silicon
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-49056OAI: oai:DiVA.org:liu-49056DiVA: diva2:269952
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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